Wuzheng IGBT modules attribute high efficiency and fast switching by combining the MOSFET gate-control structure with the high current and low saturation voltage characteristics of BJTs, ranging from 650V to 1700V or from 15A to 1600A.This chapter will show not only the features and application fields, but also the details of IGBT modules in 1200V.
FeaturesLow switching and conduction losses | ApplicationsUPS power supply |
型号 | VCES | Ic@100·c | VCE(sat)@25 | vGE(TH) | 封装Package |
DKG20PI60TE | 600 | 20 | 1.65 | 5.25 | E1 |
DKG30PI60TE | 600 | 30 | 1.65 | 5.5 | |
DKG30PI120TE | 1200 | 25 | 2.15 | 5.7 | |
DKG40PI120TE | 1200 | 40 | 2.25 | 5.6 | |
DKG10FF60TE | 600 | 10 | 1.6 | 5.5 | |
DKG20FF60TE | 600 | 20 | 1.65 | 5.4 | |
DKG10FF120TE | 1200 | 10 | 2.1 | 5.6 | |
DKG15FF120TE | 1200 | 15 | 2.1 | 5.6 | |
DKG50PI120TE | 1200 | 50 | 2.2 | 5.5 | E2 |
DKG75PI120TE | 1200 | 75 | 2.2 | 5.7 | |
DKG25FF120TE | 1200 | 25 | 2.15 | 5.8 | |
DKG40FF120TE | 1200 | 40 | 2.25 | 5.5 |
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